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2SA503 Transistor Datasheet PDF

Silicon PNP Transistor

Silicon PNP Transistor

 

 

Part Number 2SA503
Description Silicon PNP Transistor
Feature SI LICON PNP EPITAXIAL TYPE (PCT PROCESS ) HIGH FREQUENCY AMPLIFIER APPLICATION S. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED SWITCHING APPLICATIONS. FE ATURES • High Transition Frequency : f T=80MHz (Typ.) • High Breakdown V oltage : VCEO=-80V : VcEO=- 60v (2SA50 3) (2SA504) • Low Saturation Voltage : VcE(sat)=-0.12V (at I c=-150mA, I B= -15mA) • Complementary to 2SC503 and 2SC504. (Typ.) <1 X < srd CO <6 00.45 1 11 ^05.08 A 3 M so 9 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SA503 2SA504 Collector-Emitter Voltage 2SA503 2SA504 SYMBOL v CBO VCEO Emitte.
Manufacture Toshiba
Datasheet
Download 2SA503 Datasheet

2SA503

 

 

 


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Part Number 2SA503
Description Silicon PNP Transistor
Feature SI LICON PNP EPITAXIAL TYPE (PCT PROCESS ) HIGH FREQUENCY AMPLIFIER APPLICATION S. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED SWITCHING APPLICATIONS. FE ATURES • High Transition Frequency : f T=80MHz (Typ.) • High Breakdown V oltage : VCEO=-80V : VcEO=- 60v (2SA50 3) (2SA504) • Low Saturation Voltage : VcE(sat)=-0.12V (at I c=-150mA, I B= -15mA) • Complementary to 2SC503 and 2SC504. (Typ.) <1 X < srd CO <6 00.45 1 11 ^05.08 A 3 M so 9 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SA503 2SA504 Collector-Emitter Voltage 2SA503 2SA504 SYMBOL v CBO VCEO Emitte.
Manufacture Toshiba
Datasheet
Download 2SA503 Datasheet

2SA503

 

 

 

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