2SA503 Datasheet





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2SA503 Datasheet - Silicon PNP Transistor

2SA503   2SA503  

Datasheet: 2SA503 datasheet

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Description: SI LICON PNP EPITAXIAL TYPE (PCT PROCESS ) HIGH FREQUENCY AMPLIFIER APPLICATION S. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED SWITCHING APPLICATIONS. FE ATURES • High Transition Frequency : f T=80MHz (Typ.) • High Breakdown V oltage : VCEO=-80V : VcEO=- 60v (2SA50 3) (2SA504) • Low Saturation Voltage : VcE(sat)=-0.12V (at I c=-150mA, I B= -15mA) • Complementary to 2SC503 and 2SC504. (Typ.) <1 X < srd CO <6 00. 45 1 11 ^05.08 A 3 M so 9 MAXIMUM R ATINGS (Ta=25°C) CHARACTERISTIC Colle ctor-Base Voltage 2SA503 2SA504 Colle ctor-Emitter Voltage 2SA503 2SA504 SY MBOL v CBO VCEO Emitter-Base Voltage VEBO Collector Current ic Base Curre nt Collector Power Dissipation Junction Tempe


Manufacture Part Number Description

Toshiba

2SA503

Silicon PNP Transistor




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