isc Silicon PNP Power Transistor
2SA747
DESCRIPTION ·High Power Dissipation-
: PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.) ·Complement to Type 2SC1116 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(...