DatasheetsPDF.com

2SB1086

INCHANGE
Part Number 2SB1086
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 17, 2020
Detailed Description isc Silicon PNP Power Transistor 2SB1086 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V (Min) ·Wi...
Datasheet PDF File 2SB1086 PDF File

2SB1086
2SB1086

Overview
isc Silicon PNP Power Transistor 2SB1086 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SD1563 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.
0 V IC Collector Current-Continuous -1.
5 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature -3 A 10 W 1.
2 15...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)