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2SB1194

PNP Transistor

Description

isc Silicon PNP Darlington Power Transistor 2SB1194 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -3A) ·Complement to Type 2SD1633 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ...

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