| DatasheetsPDF.com |
2SB1375 Transistor Datasheet PDFPNP Transistor |
| Part Number | 2SB1375 |
|---|---|
| Description | Silicon PNP Transistor |
| Feature | TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier 2SB1375 Unit: mm • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A, IB = −0.2 A) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin • Complementary to 2SD2012 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO. |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
| Part Number | 2SB1375 |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Feature | SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1375 DESCRIPTION ·With TO-220F package ·Complement to type 2SD2012 ·Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A ·Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS ·Audio frequency power amplifier PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base c. |
| Manufacture | SavantIC |
| Datasheet |
| Part Number | 2SB1375 |
|---|---|
| Description | Silicon PNP Transistor |
| Feature | Silicon PNP Triple Diffused Type FEATURES Low Saturation Voltage:VCE(sat)=-1.5V(max.) (IC/IB=-2A/-0.2A) Pb High Power Dissipation:PC=25W(TC=25℃) Lead-free Complements the 2SD2012. Production specification 2SB1375 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Ta=25℃ Tc=25℃ Junction and Storage Temperature -60 V -7 V -3 A -0.5 A 2.0 W 25 -5. |
| Manufacture | GME |
| Datasheet |
|
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |