Silicon PNP Transistor
Description
Power Transistors
2SB1606
Silicon PNP epitaxial planar type
For power switching
Unit: mm
4.6±0.2
s Features
q q q q
φ3.2±0.1
9.9±0.3
2.9±0.2
4.1±0.2 8.0±0.2 Solder Dip
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation...
Panasonic Semiconductor
2SB1606 PDF File
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