TRANSISTOR. 2SB555 Datasheet

2SB555 Datasheet PDF

Part 2SB555
Description (2SB555 / 2SB556) SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2S.
Manufacture SavantIC
Datasheet
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SavantIC Semiconductor www.DataSheet4U.com Product Specific 2SB555 Datasheet
isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Em 2SB555 Datasheet




2SB555
SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
Product Specification
2SB555 2SB556
DESCRIPTION
·With TO-3 package
·Complement to type 2SD425/426
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Recommended for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SB555
2SB556
Open emitter
VCEO
Collector-emitter voltage
2SB555
2SB556
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
IE Emitter current
PC Collector power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
-140
-120
-140
-120
-5
-12
12
100
150
-65~150
UNIT
V
V
V
A
A
W



2SB555
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
Product Specification
2SB555 2SB556
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
2SB555
2SB556
IC=-0.1A ;IB=0
-140
-120
V
V(BR)EBO Emitter-base breakdown voltage
IE=-10mA ;IC=0
-5
V
VCEsat
Collector-emitter
saturation voltage
2SB555 IC=-7A; IB=-0.7A
2SB556 IC=-6A; IB=-0.6A
-3.0 V
VBE Base-emitter on voltage
IC=-7A ; VCE=-5V
-2.5 V
ICBO Collector cut-off current
VCB=-50V; IE=0
-0.1 mA
IEBO Emitter cut-off current
VEB=-5V; IC=0
-0.1 mA
hFE DC current gain
IC=-2A ; VCE=-5V
40 140
COB Output capacitance
IE=0 ; VCB=-10V; f=1.0MHz
330 pF
fT Transition frequency
IC=-2A ; VCE=-5V
6 MHz
2




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