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2SB676 Transistor Datasheet PDFSilicon PNP Transistor Silicon PNP Transistor |
| Part Number | 2SB676 |
|---|---|
| Description | Silicon PNP Transistor |
| Feature | www. DataSheet4U. com www. DataSheet4U. com www. DataSheet4U. com . |
| Manufacture | Toshiba |
| Datasheet |
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| Part Number | 2SB676 |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Feature | SavantIC Semiconductor
www. DataSheet4U. c om Product Specification Silicon PNP Power Transistors 2SB676 DESCRIPTION ·With TO-220C package ·High DC Curren t Gain : hFE=2000 @VCE=-2V, IC=-1A (Min . ) ·DARLINGTON APPLICATIONS ·For swit ching applications ·Hammer drive, puls e motor drive applications ·Power ampl ifier applications PINNING PIN 1 2 3 Ba se Collector; connected to mounting bas e Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitt er-base voltage Collector current-DC Co llector power dissip . |
| Manufacture | SavantIC |
| Datasheet |
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| Part Number | 2SB676 |
|---|---|
| Description | PNP Transistor |
| Feature | isc Silicon PNP Darlington Power Transis tor
DESCRIPTION ·High DC Current Gain -
: hFE = 2000(Min)@ IC= -1A ·Collecto r-Emitter Breakdown Voltage-
: V(BR)CEO = -80V(Min) ·Low Collector-Emitter Sa turation Voltage-
: VCE(sat) = -1. 5V(Ma x)@ IC= -3A ·Complement to Type 2SD686 ·Minimum Lot-to-Lot variations for ro bust device performance and reliable op eration APPLICATIONS ·Switching appli cations. ·Hammer drive, pulse motor dr ive applications. ·Power amplifier app lications. ABSOLUTE MAXIMUM RATINGS (T a=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -100 V VCEO Collector-Emitt . |
| Manufacture | INCHANGE |
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