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2SB676 Transistor Datasheet PDF

Silicon PNP Transistor

Silicon PNP Transistor

 

 

 

Part Number 2SB676
Description Silicon PNP Transistor
Feature www.
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Manufacture Toshiba
Datasheet
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2SB676

 

 

 


 

 

 

Part Number 2SB676
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor www.
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c om Product Specification Silicon PNP Power Transistors 2SB676 DESCRIPTION ·With TO-220C package ·High DC Curren t Gain : hFE=2000 @VCE=-2V, IC=-1A (Min .
) ·DARLINGTON APPLICATIONS ·For swit ching applications ·Hammer drive, puls e motor drive applications ·Power ampl ifier applications PINNING PIN 1 2 3 Ba se Collector; connected to mounting bas e Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitt er-base voltage Collector current-DC Co llector power dissip .
Manufacture SavantIC
Datasheet
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2SB676

 

 

 


 

 

 

Part Number 2SB676
Description PNP Transistor
Feature isc Silicon PNP Darlington Power Transis tor DESCRIPTION ·High DC Current Gain - : hFE = 2000(Min)@ IC= -1A ·Collecto r-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min) ·Low Collector-Emitter Sa turation Voltage- : VCE(sat) = -1.
5V(Ma x)@ IC= -3A ·Complement to Type 2SD686 ·Minimum Lot-to-Lot variations for ro bust device performance and reliable op eration APPLICATIONS ·Switching appli cations.
·Hammer drive, pulse motor dr ive applications.
·Power amplifier app lications.
ABSOLUTE MAXIMUM RATINGS (T a=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -100 V VCEO Collector-Emitt .
Manufacture INCHANGE
Datasheet
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2SB676

 

 

 

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