PNP Transistor
Description
isc Silicon PNP Power Transistor
2SB689
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -100V(Min) ·High Power Dissipation ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier and TV vertical
deflection output applications.
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