TRANSISTOR. 2SB992 Datasheet

2SB992 Datasheet PDF

Part 2SB992
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2S.
Manufacture SavantIC
Datasheet
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SavantIC Semiconductor www.DataSheet4U.com Product Specific 2SB992 Datasheet
2SB992 SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH 2SB992 Datasheet
isc Silicon PNP Power Transistor 2SB992 DESCRIPTION ·Colle 2SB992 Datasheet




2SB992
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Large current capacity
APPLICATIONS
·Suitable for relay drivers,high-speed
Inverters,converters,and other general
large-current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SB992
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
ICM
PC
Tj
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-100
-80
-7
-7
-10
40
150
-55~150
UNIT
V
V
V
A
A
W



2SB992
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,RBE=9
V(BR)CBO Collector-base breakdown voltage
IC=-1mA ,IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ,IC=0
VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A
ICBO Collector cut-off current
IEBO Emitter cut-off current
VCB=-80V; IE=0
VEB=-4V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-1V
hFE-2
DC current gain
IC=-4A ; VCE=-1V
fT Transition frequency
IC=-1A ; VCE=-5V
Product Specification
2SB992
MIN TYP. MAX UNIT
-80 V
-100
V
-7 V
-0.4 V
-5 µA
-5 µA
70 240
30
10 MHz
2




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