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2SC1626 TRANSISTOR Datasheet PDFSILICON NPN TRANSISTOR SILICON NPN TRANSISTOR |
| Part Number | 2SC1626 |
|---|---|
| Description | SILICON NPN TRANSISTOR |
| Feature | SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : VCEO=80V Complementary to 2SA816. Unit in mm 10. 3 MAX 0Z. 6 ±0. 2 MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RAINGS VCBO v CEO Vebo ic IE PC T. 1 Tste 80 80 5 750 -750 1. 5 150 -55M. 50 UNIT V V V mA mA W °C °C 1. BASE Z. COLLECTOR (HEAT SINK) 3. EMITTER JEDEC . |
| Manufacture | Toshiba |
| Datasheet |
| Part Number | 2SC1626 |
|---|---|
| Description | SILICON NPN TRANSISTOR |
| Feature | SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : VCEO=80V Complementary to 2SA816. Unit in mm 10. 3 MAX 0Z. 6 ±0. 2 MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RAINGS VCBO v CEO Vebo ic IE PC T. 1 Tste 80 80 5 750 -750 1. 5 150 -55M. 50 UNIT V V V mA mA W °C °C 1. BASE Z. COLLECTOR (HEAT SINK) 3. EMITTER JEDEC . |
| Manufacture | Toshiba |
| Datasheet |
| Part Number | 2SC1626 |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Feature | SavantIC Semiconductor
www. DataSheet4U. com Product Specification Silicon NPN Power Transistors 2SC1626 DESCRIPTION ·With TO-220C package ·Complement to type 2SA816 APPLICATIONS ·Designed for the driver stages of 30-50W high-fidelity amplifiers and medium speed switching up to 2A peak current PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig. 1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current. |
| Manufacture | SavantIC |
| Datasheet |
| Part Number | 2SC1626 |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Feature | SavantIC Semiconductor
www. DataSheet4U. com Product Specification Silicon NPN Power Transistors 2SC1626 DESCRIPTION ·With TO-220C package ·Complement to type 2SA816 APPLICATIONS ·Designed for the driver stages of 30-50W high-fidelity amplifiers and medium speed switching up to 2A peak current PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig. 1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current. |
| Manufacture | SavantIC |
| Datasheet |
| Part Number | 2SC1626 |
|---|---|
| Description | NPN Transistor |
| Feature | isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1626
DESCRIPTION ·Silicon NPN planar type ·Complementary to 2SA816 ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
0. 75 A ICM Collector Current-Pulsed Col. |
| Manufacture | INCHANGE |
| Datasheet |
| Part Number | 2SC1626 |
|---|---|
| Description | NPN Transistor |
| Feature | isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1626
DESCRIPTION ·Silicon NPN planar type ·Complementary to 2SA816 ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
0. 75 A ICM Collector Current-Pulsed Col. |
| Manufacture | INCHANGE |
| Datasheet |
|
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