Power Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min.) ·High Power Dissipation ·Complement to Type 2SA1147 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power switching amplifier and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=2...
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