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2SC2791

NPN Transistor

Description

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed and high voltage switching applications ·Switching regulator applications ·High speed DC-DC converter applications A...

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