NPN Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 4A, IB= 0.8A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-voltage, high-speed and high power
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