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2SC3355 Transistor Datasheet PDF

Silicon NPN RF Transistor

Silicon NPN RF Transistor

　

　

　

Part Number 2SC3355
Description Silicon NPN RF Transistor
Feature isc Silicon NPN RF Transistor DESCRIPTI ON ·Low Noise NF = 1.
5dB TYP @ VCE=10V ，IC=7mA， f=1GHz
•High Power Gain ︱S21e︱2 = 9.
5dB TYP @ VCE=10V，IC= 20mA，f=1GHz ·Minimum Lot-to-Lot vari ations for robust device performance an d reliable operation APPLICATIONS ·The 2SC3355 is an NPN silicon epitaxial tr ansistor designed for low noise amplifi er at VHF, UHF and CATV band.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PA RAMETER VALUE UNIT VCBO Collector-B ase Voltage 20 V VCEO Collector-Emi tter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-C ontinuous Pc Collector Power Di .
Manufacture Inchange Semiconductor
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2SC3355

　

　

　

　

　

　

Part Number 2SC3355
Description Silicon NPN transistor
Feature 2SC3355 Rev.
E Mar.
-2016 DATA SHEET / Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package.
/ Features 。 Low noise and high p ower gain.
/ Applications 、。 low noise amplifier at VHF, UHF and CATV b and applications.
/ Equivalent Circui t / Pinning 1 23 PIN1：Base PIN 2 Collector PIN 3：Emitter / hFE Cl assifications & Marking 。See Marking Instructions.
http://www.
fsbrec.
com 1 /6 2SC3355 Rev.
E Mar.
-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current .
Manufacture BLUE ROCKET ELECTRONICS
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2SC3355

　

　

　

　

　

　

Part Number 2SC3355
Description NPN Silicon Transistor
Feature DATA SHEET SHEET DATA SILICON TRANSISTO R 2SC3355 HIGH FREQUENCY LOW NOISE AMP LIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN sil icon epitaxial transistor designed for low noise amplifier at VHF, UHF and CAT V band.
It has lange dynamic range and good current characteristic.
PACKAGE DI MENSIONS in millimeters (inches) 5.
2 MA X.
(0.
204 MAX.
) FEATURES
• Low Noise and High Gain NF = 1.
1 dB TYP.
, Ga = 8 .
0 dB TYP.
@VCE = 10 V, IC = 7 mA, f = 1.
0 GHz NF = 1.
1 dB TYP.
, Ga = 9.
0 dB T YP.
@VCE = 10 V, IC = 40 mA, f = 1.
0 GH z
• High Power Gain MAG = 11 dB TYP.
@VCE = 10 V, IC = .
Manufacture NEC
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2SC3355

　

　

　

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