isc Silicon NPN Power Transistor
2SC3447
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATING...
