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2SC3808

Part Number	2SC3808
Manufacturer	Sanyo Semicon Device
Description	NPN Epitaxial Planar Silicon Transistor
Published	Mar 22, 2005
Datasheet	2SC3808 PDF File

Features

· Large current capacity (IC=2A).· Adoption of MBIT process.· High DC current gain (hFE=800 to 3200).· Low collector-to-emitter saturation voltage
(VCE(sat)≤0.5V).· High VEBO (VEBO≥15V).

Package Dimensions
unit:mm 2043A
[2SC3808]

Specifications...

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