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2SC5252

Inchange Semiconductor
Part Number 2SC5252
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Nov 18, 2016
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·High speed switching High breakdown voltage VCBO = 1500 V ·Minimum Lot-to...
Datasheet PDF File 2SC5252 PDF File

2SC5252
2SC5252

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·High speed switching High breakdown voltage VCBO = 1500 V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 15 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5252 isc website： www.
iscsemi.
com 1 isc & iscsemi is regis...


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