Part Number | 2SD1173 |
Manufacturer | Inchange Semiconductor |
Title | Silicon NPN Transistor |
Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 4.0V... |
Features | BOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 5 V VCE(sat)... |
Published | Jun 24, 2016 |
Datasheet | 2SD1173 PDF File |