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2SD1173

Inchange Semiconductor
Part Number 2SD1173
Manufacturer Inchange Semiconductor
Title Silicon NPN Transistor
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 4.0V...
Features BOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 5 V VCE(sat)...
Published Jun 24, 2016
Datasheet PDF File 2SD1173 PDF File


2SD1173
2SD1173


Features
BOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 1.0A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Base Cutoff Cu...



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