Part Number | 2SD1192 |
Manufacturer | Inchange Semiconductor |
Title | Silicon NPN Darlington Power Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 2000(Min) @I... |
Features | CS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Break... |
Published | Dec 26, 2013 |
Datasheet | 2SD1192 PDF File |