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2SD1192

Inchange Semiconductor
Part Number 2SD1192
Manufacturer Inchange Semiconductor
Title Silicon NPN Darlington Power Transistor
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 2000(Min) @I...
Features CS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Break...
Published Dec 26, 2013
Datasheet PDF File 2SD1192 PDF File


2SD1192
2SD1192


Features
CS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 70 V VCE(sat) Collector-Emitter...



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