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2SD1301
NPN Transistor
Description
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1301 DESCRIPTION ·High Breakdown
Voltage
- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation
Voltage
- : VCE(sat)= 3.0V(Max.)@ IC= 1A ·Wide area of safe operation ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS...
INCHANGE
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