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2SD1398

INCHANGE
Part Number 2SD1398
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 21, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Built-in damper diode ·Mini...
Datasheet PDF File 2SD1398 PDF File

2SD1398
2SD1398

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 16 A 50 W 150 ℃ Tstg Storage Temperature Range -55-150 ℃ 2SD1398 isc website：www.
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