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2SD2018

Part Number	2SD2018
Manufacturer	Panasonic Semiconductor
Description	Silicon NPN Transistor
Published	Apr 3, 2005
Detailed Description	Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification 8.0+0.5 –0.1 Un...
Datasheet	2SD2018 PDF File

Overview

Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification 8.
0+0.
5 –0.
1 Unit: mm 3.
2±0.
2 ■ Features • High forward current transfer ratio hFE • Built-in 60 V Zener diode between base to collector φ 3.
16±0.
1 3.
8±0.
3 11.
0±0.
5 1.
9±0.
1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Tj Tstg TC = 25°C Symbol VCBO VCEO VEBO IC ICP PC Rating 25 60 + −10 +25 60 −10 Unit V V V A A W °C °C B 1 2 3 0.
75±0.
1 4.
6±0.
2 5 1 1.
5 1.
2 5.
0 1...

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