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2SD2108
NPN Transistor
Description
isc Silicon NPN Darlington Power Transistor 2SD2108 DESCRIPTION ·Collector-Emitter Breakdown
Voltage
- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation
Voltage
- : VCE(sat)= 1.5V(Max) @IC= 4A ·High DC Current Gain : hFE= 1000(Min) @ IC= 4A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed f...
INCHANGE
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2SD2108
Silicon NPN Transistor
- Hitachi Semiconductor
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