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2SD2165

Inchange Semiconductor
Part Number 2SD2165
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Nov 17, 2016
Detailed Description isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 800(MIN)@ (VCE= 5V, IC= 1A) ·Low ...
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2SD2165
2SD2165

Overview
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 800(MIN)@ (VCE= 5V, IC= 1A) ·Low Collector-Emitter Saturation Voltage : VCE(sat) =1V(MIN)@ (IC = 3V, IB= 30mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use low frequency amplifilier and low switching speed applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ P...


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