NPN Transistor
Description
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·High DC Current Gain-
: hFE= 5000( Min.) @(IC= 4A, VCE= 5V) ·Low Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ (IC= 4A, IB= 4mA) ·Complement to Type 2SB1502 ·Minimum Lot-to-Lot variations for robust device
performance and reliable oper...
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