Transistor
2SD2345
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
1.6±0.15
s Features
q q q q
0.4
0.8±0.1
0.4
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV.
1.6±0.1
1.0±0.1
0.5
1
0.5
3
2
0.45±0.1 0.3
0.75±0.15
P...
