Silicon NPN Transistor
Description
2SD2387
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD2387
Power Amplifier Applications
Unit: mm
· High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1558
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Co...
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