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2SD640
NPN Transistor
Description
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD640 DESCRIPTION ·Collector-Emitter Breakdown
Voltage
- : V(BR)CEO= 400V (Min) ·Low Collector-Emitter Saturation
Voltage
- : VCE(sat)= 1.5V (Max.)@ IC= 5A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High
voltage
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INCHANGE
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