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2SK2730 MOSFET Datasheet PDFSilicon N-Channel MOSFET Silicon N-Channel MOSFET |
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| Part Number | 2SK2730 |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | 2SK2730
Silicon N Channel MOS FET High S peed Power Switching
ADE-208-493 A (Z) 2nd. Edition September 1997 Features β ’ β’ β’ β’ Low on-resistance High s peed switching Low drive current Avalan che ratings Outline TOβ3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. So urce 2SK2730 Absolute Maximum Ratings (Ta = 25Β°C) Item Drain to source volta ge Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche curren t Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW β€ 10 Β΅s, duty cycle β € 1 % 2. Value at Tc = 25Β°C 3. . |
| Manufacture | Hitachi Semiconductor |
| Datasheet |
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| Part Number | 2SK2730 |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | 2SK2730
Silicon N Channel MOS FET High S peed Power Switching
Features
β’ Low o n-resistance β’ High speed switching β ’ Low drive current β’ Avalanche rati ngs REJ03G1028-0300 (Previous: ADE-208 -493A) Rev. 3. 00 Sep 07, 2005 Outline RENESAS Package code: PRSS0004ZE-A (Pac kage name: TO-3P) D 1. Gate G 2. Dr ain (Flange) 3. Source 1 2 S 3 Re v. 3. 00 Sep 07, 2005 page 1 of 7 2SK273 0 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltag e Drain current Drain peak current Body to drain diode reverse drain current A valanche current Avalanche energy Chann el dissipation Channel . |
| Manufacture | Renesas |
| Datasheet |
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