MOS FET. 2SK2869 Datasheet

2SK2869 Datasheet PDF


Part Number

2SK2869

Description

Silicon N Channel MOS FET

Manufacture

Hitachi Semiconductor

Total Page 10 Pages
Datasheet
Download 2SK2869 Datasheet



2SK2869
2SK2869
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS = 0.033 typ.
High speed switching
4V gate drive device can be driven from 5V source
Outline
DPAK–2
4
4
D
G
S
12 3
12 3
1. Gate
2. Drain
3. Source
4. Drain
ADE-208-570
1st. Edition

2SK2869
2SK2869
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
I *1
D(pulse)
I DR
I AP * 3
EAR* 3
Pch*2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10µs, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Ratings
60
±20
20
80
20
20
34
30
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
2




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