2SK3290
Silicon N Channel MOS FET High Speed Switching
ADE-208-744 C (Z) 4th.Edition. June 1999 Features
Low on-resistance R DS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA) R DS = 0.9 Ω typ. (VGS = 4 V , ID = 100 mA) 4 V gate drive device. Small package (MPAK)
Outline
MPAK
3 1
D
2
G
1. Source 2. Gate 3. Drain
S
2SK3290
Absolute Maximum Ratings (Ta ...
