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2SK3537-01MR Datasheet

N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor 2SK3537-01MR FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, po.


Inchange Semiconductor
2SK3537-01MR.pdf

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Inchange Semiconductor 2SK3537-01MR Datasheet

isc N-Channel MOSFET Transistor 2SK3537-01MR FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 23 A IDM Drain Current-Single Pluse 96 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 3.13 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise s.






2SK3537-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsol.


Fuji Electric
2SK3537-01MR.pdf

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Fuji Electric 2SK3537-01MR Datasheet

2SK3537-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage VDS 150 V VDSX *5 130 V Continuous drain current ID ±33 A Pulsed drain current ID(puls] ±132 A Gate-source voltage VGS ±20 V Repetitive or non-repetitive IAR *2 33 A Maximum Avalanche Energy EAS *1 169 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs Peak Diode Recovery dV/dt Max. power dissipation dV/dt *3 PD Ta=25°C Tc=25°C 5 2.16 53 kV/µs W Operating and storage Tch +150 °C temperature range Tstg -55 to +150 °C *1 L=0.228mH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch=<150°C *3.








 

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