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2SK3550-01R MOSFET Datasheet PDF

Power MOSFET

Power MOSFET

 

 

 

Part Number 2SK3550-01R
Description Power MOSFET
Feature www.
DataSheet4U.
com Fuji Power MOSFET S uperFAP-G series Target Specification 2SK3550-01R (900V/1.
4Ω/10A) TO-3PF P RELIMINARY 1) Package Items Drain-Sour ce Voltage Continuous Drain Current Pul sed Drain Current Gate-Source Voltage R epetitive and Non-Repetitive Maximum Av alanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode recovery dV/dt Maximum Power Dissipation Operating and Storage Temperature range This material and th e information herein is the property of Fuji Electric Co.
,Ltd.
They shall be n either reproduced, copied, lent, or dis closed in any wa .
Manufacture Fuji Electric
Datasheet
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Part Number 2SK3550-01R
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK3550 -01R FEATURES ·Drain Current : ID= 10 A@ TC=25℃ ·Drain Source Voltage : VD SS= 900V(Min) ·Static Drain-Source On- Resistance : RDS(on) = 1.
4Ω(Max) @ VGS = 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devic e performance and reliable operation D ESCRIPTION ·motor drive, DC-DC convert er, power switch and solenoid drive.
A BSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB OL PARAMETER VALUE UNIT VDSS Drain -Source Voltage 900 V VGS Gate-Sour ce Voltage-Continuous ±30 V ID Dra in Current-Continuous 10 A IDM Drai n Current-Single Pluse 40 .
Manufacture Inchange Semiconductor
Datasheet
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