DatasheetsPDF.com

2SK3561 MOSFET Datasheet PDF

Silicon N-Channel MOSFET

Silicon N-Channel MOSFET

 

 

 

Part Number 2SK3561
Description Silicon N-Channel MOSFET
Feature 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2 SK3561 Switching Regulator Application s
• Low drain-source ON resistance: R DS (ON) = 0.
75 Ω (typ.
)
• High forw ard transfer admittance: |Yfs| = 6.
5 S (typ.
)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement m ode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ra tings (Ta = 25°C) Characteristics Sy mbol Rating Unit Drain-source voltag e Drain-gate voltage (RGS = 20 kΩ) Ga te-source voltage Drain current DC (N ote 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25° .
Manufacture Toshiba
Datasheet
Download 2SK3561 Datasheet

2SK3561

 

 

 


 

 

 

Part Number 2SK3561
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK3561 FEATURES ·Drain Current : ID= 8A@ TC =25℃ ·Drain Source Voltage : VDSS= 5 00V(Min) ·Static Drain-Source On-Resis tance : RDS(on) = 0.
85Ω(Max) @ VGS= 10 V ·100% avalanche tested ·Minimum Lot -to-Lot variations for robust device pe rformance and reliable operation DESCR IPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOL UTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Sou rce Voltage 500 V VGS Gate-Source V oltage-Continuous ±30 V ID Drain C urrent-Continuous 8 A IDM Drain Cur rent-Single Pluse 32 A .
Manufacture Inchange Semiconductor
Datasheet
Download 2SK3561 Datasheet

2SK3561

 

 

 

@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)