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2SK3561 MOSFET Datasheet PDFSilicon N-Channel MOSFET Silicon N-Channel MOSFET |
| Part Number | 2SK3561 |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | 2SK3561
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2 SK3561
Switching Regulator Application s
• Low drain-source ON resistance: R DS (ON) = 0. 75 Ω (typ. ) • High forw ard transfer admittance: |Yfs| = 6. 5 S (typ. ) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • Enhancement m ode: Vth = 2. 0 to 4. 0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ra tings (Ta = 25°C) Characteristics Sy mbol Rating Unit Drain-source voltag e Drain-gate voltage (RGS = 20 kΩ) Ga te-source voltage Drain current DC (N ote 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25° . |
| Manufacture | Toshiba |
| Datasheet |
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| Part Number | 2SK3561 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK3561
FEATURES ·Drain Current : ID= 8A@ TC =25℃ ·Drain Source Voltage
: VDSS= 5 00V(Min) ·Static Drain-Source On-Resis tance
: RDS(on) = 0. 85Ω(Max) @ VGS= 10 V ·100% avalanche tested ·Minimum Lot -to-Lot variations for robust device pe rformance and reliable operation DESCR IPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOL UTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Sou rce Voltage 500 V VGS Gate-Source V oltage-Continuous ±30 V ID Drain C urrent-Continuous 8 A IDM Drain Cur rent-Single Pluse 32 A . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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