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TENTATIVE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3564
2SK3564
unit
Switching Regulator Applications
10±0.3 φ3.2±0.2 2.7±0.2
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR V...
