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2SK3602-01 Transistor Datasheet PDF

N-Channel MOSFET Transistor

N-Channel MOSFET Transistor

 

 

 

Part Number 2SK3602-01
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK3602 -01 FEATURES ·Drain Current : ID= 23A @ TC=25℃ ·Drain Source Voltage : VDS S= 150V(Min) ·Static Drain-Source On-R esistance : RDS(on) = 105mΩ(Max) @ VGS = 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devic e performance and reliable operation D ESCRIPTION ·motor drive, DC-DC convert er, power switch and solenoid drive.
A BSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB OL PARAMETER VALUE UNIT VDSS Drain -Source Voltage 150 V VGS Gate-Sour ce Voltage-Continuous ±30 V ID Dra in Current-Continuous 23 A IDM Drai n Current-Single Pluse 92 .
Manufacture Inchange Semiconductor
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Part Number 2SK3602-01
Description N-CHANNEL SILICON POWER MOSFET
Feature 2SK3602-01 FUJI POWER MOSFET 200304 Sup er FAP-G Series Features High speed swi tching Low on-resistance No secondary b readown Low driving power Avalanche-pro of N-CHANNEL SILICON POWER MOSFET Outl ine Drawings (mm) TO-220AB Application s Switching regulators UPS (Uninterrupt ible Power Supply) DC-DC converters Ma ximum ratings and characteristicAbsolut e maximum ratings (Tc=25°C unless othe rwise specified) Item Drain-source volt age Continuous drain current Pulsed dra in current Gate-source voltage Non-repe titive Avalanche current Maximum Avalan che Energy Maximum Drain-Source dV/dt P eak Diode Recov .
Manufacture Fuji Electric
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