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2SK3651-01R MOSFET Datasheet PDF

N-CHANNEL SILICON POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

 

 

 

Part Number 2SK3651-01R
Description N-CHANNEL SILICON POWER MOSFET
Feature www.
DataSheet4U.
com 2SK3651-01R FUJI PO WER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving powe r Avalanche-proof N-CHANNEL SILICON PO WER MOSFET Outline Drawings (mm) Appli cations Switching regulators UPS (Unint erruptible Power Supply) DC-DC converte rs Maximum ratings and characteristicA bsolute maximum ratings (Tc=25°C unles s otherwise specified) Ratings Unit V 2 00 V 220 A Continuous drain current ±2 5 A Pulsed drain current ±100 V Gate-s ource voltage ±30 A Non-repetitive Ava lanche current 25 mJ Maximum Avalanche Energy 372 kV/µs M .
Manufacture Fuji Electric
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Part Number 2SK3651-01R
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK3651 -01R FEATURES ·Drain Current : ID= 25 A@ TC=25℃ ·Drain Source Voltage : VD SS= 200V(Min) ·Static Drain-Source On- Resistance : RDS(on) = 100mΩ(Max) @ VG S= 10V ·100% avalanche tested ·Minimu m Lot-to-Lot variations for robust devi ce performance and reliable operation DESCRIPTION ·motor drive, DC-DC conver ter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM BOL PARAMETER VALUE UNIT VDSS Drai n-Source Voltage 200 V VGS Gate-Sou rce Voltage-Continuous ±30 V ID Dr ain Current-Continuous 25 A IDM Dra in Current-Single Pluse 1 .
Manufacture Inchange Semiconductor
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