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2SK3797 MOSFET Datasheet PDFSilicon N-Channel MOSFET Silicon N-Channel MOSFET |
| Part Number | 2SK3797 |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | 2SK3797
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
w ww. DataSheet4U. com 2SK3797 Unit: mm S witching Regulator Applications • • • • Low drain-source ON resistance : RDS (ON) = 0. 32Ω (typ. ) High forward transfer admittance: |Yfs| = 7. 5 S (ty p. ) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement model: Vth = 2. 0~4. 0 V (VDS = 10 V, ID = 1 mA) Max imum Ratings (Ta = 25°C) Characteristi c Drain-source voltage Drain-gate volta ge (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS V DGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 13 52 50 . |
| Manufacture | Toshiba Semiconductor |
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| Part Number | 2SK3797 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK3797
FEATURES ·Drain Current : ID= 13A@ T C=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Static Drain-Source On-Resi stance
: RDS(on) = 0. 43Ω(Max) @ VGS= 1 0V ·100% avalanche tested ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation DESC RIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSO LUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-So urce Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 13 A IDM Drain C urrent-Single Pluse 52 A . |
| Manufacture | Inchange Semiconductor |
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