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2SK3797 MOSFET Datasheet PDF

Silicon N-Channel MOSFET

Silicon N-Channel MOSFET

 

 

 

Part Number 2SK3797
Description Silicon N-Channel MOSFET
Feature 2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) w ww.
DataSheet4U.
com 2SK3797 Unit: mm S witching Regulator Applications



• Low drain-source ON resistance : RDS (ON) = 0.
32Ω (typ.
) High forward transfer admittance: |Yfs| = 7.
5 S (ty p.
) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement model: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Max imum Ratings (Ta = 25°C) Characteristi c Drain-source voltage Drain-gate volta ge (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS V DGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 13 52 50 .
Manufacture Toshiba Semiconductor
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Part Number 2SK3797
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK3797 FEATURES ·Drain Current : ID= 13A@ T C=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resi stance : RDS(on) = 0.
43Ω(Max) @ VGS= 1 0V ·100% avalanche tested ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation DESC RIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSO LUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-So urce Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 13 A IDM Drain C urrent-Single Pluse 52 A .
Manufacture Inchange Semiconductor
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