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2SK3892 MOSFET Datasheet PDF

Silicon N-channel power MOSFET

Silicon N-channel power MOSFET

 

 

 

Part Number 2SK3892
Description Silicon N-channel power MOSFET
Feature This product complies with the RoHS Dire ctive (EU 2002/95/EC).
Power MOSFETs 2SK3892 Silicon N-channel power MOSFET For contactless relay, diving circuit f or a solenoid, driving circuit for a mo tor, control equipment and switching po wer supply  Features  Gate-source surrender voltage VGSS : ± 30 guarant eed  Avalanche energy capacity guara nteed: EAS > 986 mJ  High-speed swit ching: tf = 39 ns  Package  Cod e TO-220D-A1  Pin Name 1: Gate 2: D rain 3: Source Parameter Symbol VDSS VGSS ID IDP Drain-source surrender vol tage Gate-source surrender voltage Drai n current Peak drain current .
Manufacture Panasonic
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Part Number 2SK3892
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK3892 FEATURES ·Drain Current : ID= 22A@ T C=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resi stance : RDS(on) = 62mΩ(Max) ·100% av alanche tested ·Minimum Lot-to-Lot var iations for robust device performance a nd reliable operation DESCRIPTION ·mo tor drive, DC-DC converter, power switc h and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Cont inuous ±30 V ID Drain Current-Cont inuous 22 A IDM Drain Current-Singl e Pluse 88 A PD Total .
Manufacture Inchange Semiconductor
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