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2SK4088LS Transistor Datasheet PDF

N-Channel MOSFET Transistor

N-Channel MOSFET Transistor

 

 

 

Part Number 2SK4088LS
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK4088 LS FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS = 650V(Min) ·Static Drain-Source On-Re sistance : RDS(on) = 0.
85Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DE SCRIPTION ·motor drive, DC-DC converte r, power switch and solenoid drive.
AB SOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE UNIT VDSS Drain- Source Voltage 650 V VGS Gate-Sourc e Voltage-Continuous ±30 V ID Drai n Current-Continuous 11 A IDM Drain Current-Single Pluse 40 .
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Part Number 2SK4088LS
Description N-Channel Silicon MOSFET
Feature www.
DataSheet4U.
com Ordering number : E NA0556A 2SK4088LS SANYO Semiconductor s DATA SHEET N-Channel Silicon MOSFET 2SK4088LS Features



• Ge neral-Purpose Switching Device Applicat ions Low ON-resistance, low input capa citance, ultrahigh-speed switching.
Hig h reliability (Adoption of HVP process) .
Attachment workability is good by Mic a-less package.
Avalanche resistance gu arantee.
Specifications Absolute Maxim um Ratings at Ta=25°C Parameter Drain- to-Source Voltage Gate-to-Source Voltag e Drain Current (DC) Drain Current (Pul se) Allowable Power Dissipation Channel Temperature Storage Te .
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Part Number 2SK4088LS
Description N-Channel Power MOSFET
Feature Ordering number : ENA0556D 2SK4088LS N- Channel Power MOSFET 650V, 11A, 0.
85Ω, TO-220F-3FS http://onsemi.
com Featur es
• ON-resistance RDS(on)=0.
65Ω (ty p.
)
• 10V drive
• Input capacitanc e Ciss=1000pF (typ.
) Specifications Absolute Maximum Ratings at Ta=25°C P arameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS 65 0 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) IDc*1 IDpack*2 Limited only by maximum temperature Tc h=150°C Tc=25°C (Our ideal heat dissi pation condition)*3 11 A 7.
5 A Drain Current (Pulse) IDP PW≤10μs, duty c ycle≤1% 40 A Allowable Power .
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