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2SK4088LS Transistor Datasheet PDFN-Channel MOSFET Transistor N-Channel MOSFET Transistor |
| Part Number | 2SK4088LS |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK4088 LS
FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage
: VDSS = 650V(Min) ·Static Drain-Source On-Re sistance
: RDS(on) = 0. 85Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DE SCRIPTION ·motor drive, DC-DC converte r, power switch and solenoid drive. AB SOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE UNIT VDSS Drain- Source Voltage 650 V VGS Gate-Sourc e Voltage-Continuous ±30 V ID Drai n Current-Continuous 11 A IDM Drain Current-Single Pluse 40 . |
| Manufacture | Inchange Semiconductor |
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| Part Number | 2SK4088LS |
|---|---|
| Description | N-Channel Silicon MOSFET |
| Feature | www. DataSheet4U. com Ordering number : E NA0556A 2SK4088LS SANYO Semiconductor s DATA SHEET N-Channel Silicon MOSFET 2SK4088LS Features • • • • Ge neral-Purpose Switching Device Applicat ions Low ON-resistance, low input capa citance, ultrahigh-speed switching. Hig h reliability (Adoption of HVP process) . Attachment workability is good by Mic a-less package. Avalanche resistance gu arantee. Specifications Absolute Maxim um Ratings at Ta=25°C Parameter Drain- to-Source Voltage Gate-to-Source Voltag e Drain Current (DC) Drain Current (Pul se) Allowable Power Dissipation Channel Temperature Storage Te . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
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| Part Number | 2SK4088LS |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | Ordering number : ENA0556D
2SK4088LS
N- Channel Power MOSFET
650V, 11A, 0. 85Ω, TO-220F-3FS http://onsemi. com Featur es • ON-resistance RDS(on)=0. 65Ω (ty p. ) • 10V drive • Input capacitanc e Ciss=1000pF (typ. ) Specifications Absolute Maximum Ratings at Ta=25°C P arameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS 65 0 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) IDc*1 IDpack*2 Limited only by maximum temperature Tc h=150°C Tc=25°C (Our ideal heat dissi pation condition)*3 11 A 7. 5 A Drain Current (Pulse) IDP PW≤10μs, duty c ycle≤1% 40 A Allowable Power . |
| Manufacture | ON Semiconductor |
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