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2SK2734 MOSFET Datasheet PDFSilicon N-Channel MOSFET Silicon N-Channel MOSFET |
| Part Number | 2SK2734 |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | 2SK2734
Silicon N Channel MOS FET High S peed Power Switching
ADE-208-520 1st. Edition Features • Low on-resistance R DS(on) = 0. 04Ω typ (at VGS = 10 V, I D = 2. 5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A Outline TO-92MOD. D G 3 S 2 1 1 . Source 2. Drain 3. Gate 2SK2734 Abso lute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak curren t Symbol VDSS VGSS ID I D(pulse)* 1 Ra tings 30 ±20 5 20 5 0. 9 150 –55 to + 150 Unit V V A A A W °C °C Body to drain diode reverse drain current I DR Channel dissipation Channel . |
| Manufacture | Hitachi Semiconductor |
| Datasheet |
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| Part Number | 2Sk2734 |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | 2SK2734
Silicon N Channel MOS FET High S peed Power Switching
Features
• Low on-resistance RDS(on) = 0. 04Ω typ (at VGS = 10 V, ID = 2. 5 A) • 4V gate dr ive devices. • Large current capacita nce ID = 5 A Outline TO-92MOD. ADE-208 -520 (Z) 1st. Edition Jun 1997 D G S 32 1 1. Source 2. Drain 3. Gate 2SK27 34 Absolute Maximum Ratings (Ta = 25° C) Item Symbol Drain to source volta ge Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipat ion VDSS VGSS ID I *1 D(pulse) I DR Pc h Channel temperature Tch Storage te mperature Tstg Note: . |
| Manufacture | Renesas |
| Datasheet |
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