N-channel Enhancement Mode MOSFET
3075
DESCRIPTION
The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
RDS(ON) < Ω @ VGS=4.5V
RDS(ON) < Ω @ VGS=10V High Power and current h...
