PNP Transistor
Description
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -110V(Min.) ·DC Current Gain-
: hFE=10-180@IC= -2.5A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ IC= -2.5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier ·Low speed switching ·P...
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