Diodes. 5082-3379 Datasheet

5082-3379 Datasheet PDF

Part 5082-3379
Description PIN Diodes
Feature 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for R.
Manufacture AVAGO
Datasheet
Download 5082-3379 Datasheet

www.DataSheet4U.com PIN Diodes for RF Switching and Attenua 5082-3379 Datasheet
1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/8 5082-3379 Datasheet





5082-3379
1N5719, 1N5767, 5082-3001, 5082-3039,
5082-3077, 5082-3080/81, 5082-3188, 5082-3379
PIN Diodes for RF Switching and Attenuating
Data Sheet
Description/Applications
These general purpose switch­ing diodes are intended for
low power switching applications such as RF ­duplexers,
antenna switching matrices, digital phase shifters, and time
multi­plex filters. The 5082-3188 is ­optimized for VHF/UHF
bandswitching.
Features
• Low Harmonic Distortion
• Large Dynamic Range
• Low Series Resistance
• Low Capacitance
The RF resistance of a PIN diode is a function of the current
flowing in the diode.These current controlled resistors are
specified for use in control appli­cations such as variable RF
attenuators, automatic gain control circuits, RF modula-
tors, electrically tuned filters, analog phase shifters, and
RF limiters.
Outline 15
0.41 (.016)
0.36 (.014)
Outline 15 diodes are available on tape and reel. The tape
and reel specification is patterned after RS-296-D.
1.93 (.076)
1.73 (.068)
25.4 (1.00)
MIN.
Maximum Ratings
Junction Operating and
Storage Temperature Range.........................-65°C to +150°C
Power Dissipation 25°C..................................................250 mW
(Derate linearly to zero at 150°C)
Peak Inverse Voltage
Maximum Soldering
(PIV)...................................... same
Temperature................ 260°C for
a5ssVeBcR
CATHODE
4.32 (.170)
3.81 (.150)
25.4 (1.00)
MIN.
DIMENSIONS IN MILLIMETERS AND (INCHES).



5082-3379
Mechanical Specifications
The Avago Outline 15 package has a glass hermetic seal with
dumet leads. The lead finish is 95-5 tin-lead (SnPb) for all
PIN diodes. The leads on the Outline 15 package should be
restrictedsothatthebendstartsatleast1/16 inch(1.6  mm)
from the glass body. Typi­cal package inductance and ca-
pacitance are 2.5 nH and 0.13  pF, respectively. Marking is
by digital coding with a cathode band.
General Purpose Diodes
Electrical Specifications at TA = 25°C
Maximum
Minimum
Part
Total Breakdown
Number
Capacitance
Voltage
5082-
CT (pF)
VBR (V)
Maximum
Residual Series
Resistance
RS ()
Effective Carrier
Lifetime
τ (ns)
General Purpose Switching and Attenuating
3001
0.25
200
1.0
100 (min.)
3039
0.25
150
1.25
100 (min.)
1N5719
0.3**
150
1.25
100 (min.)
3077
0.3
200
1.5
100 (min.)
  Band Switching
3188
1.0*
35 0.6**
70 (typ.)*
Test
Conditions
VR = 50 V
VR = VBR
*VR = 20 V
Measure
**VR = 100 V
IR ≤ 10 µA
f = 1 MHz
IF =100 mA
*IF = 20 mA
**IF = 10 mA
f = 100 MHz
IF = 50 mA
IR = 250 mA
*IF = 10 mA
*IR = 6 mA
Notes:
Typical CW power switching capability for a shunt switch in a 50Ω system is 2.5 W.
Reverse Recovery
Time
trr (ns)
100 (typ.)
100 (typ.)
100 (typ.)
100 (typ)
12 (typ.)
IF = 20 mA
VR = 10 V
90% Recovery
RF Current Controlled Resistor Diodes
Electrical Specifications at TA = 25°C
Max.
High Low
Effective Min. Residual
Max.
Resistance
Resistance
Part
Carrier
Lifetime
Breakdown
Voltage
Series
Resistance
CapTaoctitaal nce Limi t, RH () Limit, RL ()
Number
τ (ns)
5082-3080 1300 (typ.)
VBR (V)
100
RS ()
2.5
CT (pF)
0.4
Min.  Max.
Min.  Max.
1000         
8**
1N5767* 1300 (typ.)
100
2.5
0.4
1000         
8**
5082-3379 1300 (typ.)
50
0.4       8**
5082-3081 2500 (typ.)
100
3.5
0.4
1500        
8**
Max.
Difference
in
Resistance
vs. Bias
Slope, Dc
ConTdei sttio n s IRIF==25500mm AA IMRV≤Re=a1s0Vu BµrReA, fIF==11000 0 MmHAz fV=R =1 5M0HVz fIF==100.001MmHAz IfFIF===12100.00mMmAHA*z*
*The 1N5767 has the additional specifications: τ = 1.0 msec minimum
          
             
IVRF==11µVAmmaaxximimuummaattIFV=R
= 50
100
V
mA.
Batch
Matched at
IaF n=d01.0.01
mA
mA
f = 100 MHz





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