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5LN01N Applications Datasheet PDF

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications

　

　

Part Number 5LN01N
Description Ultrahigh-Speed Switching Applications
Feature Ordering number : ENN6558 5LN01N N-Channel Silicon MOSFET 5LN01N Ultrahigh-Speed Switching Applications Features
•
•
• Package Dimensions unit : mm 2178 5.
0 4.
0 Low ON-resistance.
Ultrahigh-speed switching.
2.
5V drive.
[5LN01N] 4.
0 0.
45 0.
5 0.
6 2.
0 5.
0 0.
45 0.
44 14.
0 1 2 3 1 : Source 2 : Drain 3 : Gate 1.
3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% C.
Manufacture Sanyo Semicon Device
Datasheet
Download 5LN01N Datasheet
Part Number 5LN01N
Description Ultrahigh-Speed Switching Applications
Feature Ordering number : ENN6558 5LN01N N-Channel Silicon MOSFET 5LN01N Ultrahigh-Speed Switching Applications Features
•
•
• Package Dimensions unit : mm 2178 5.
0 4.
0 Low ON-resistance.
Ultrahigh-speed switching.
2.
5V drive.
[5LN01N] 4.
0 0.
45 0.
5 0.
6 2.
0 5.
0 0.
45 0.
44 14.
0 1 2 3 1 : Source 2 : Drain 3 : Gate 1.
3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% C.
Manufacture Sanyo Semicon Device
Datasheet
Download 5LN01N Datasheet

5LN01N
5LN01N   5LN01N

　

　

　

　

　

Part Number 5LN01N
Description Ultrahigh-Speed Switching Applications
Feature Ordering number : ENN6558 5LN01N N-Channel Silicon MOSFET 5LN01N Ultrahigh-Speed Switching Applications Features
•
•
• Package Dimensions unit : mm 2178 5.
0 4.
0 Low ON-resistance.
Ultrahigh-speed switching.
2.
5V drive.
[5LN01N] 4.
0 0.
45 0.
5 0.
6 2.
0 5.
0 0.
45 0.
44 14.
0 1 2 3 1 : Source 2 : Drain 3 : Gate 1.
3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% C.
Manufacture Sanyo Semicon Device
Datasheet
Download 5LN01N Datasheet
Part Number 5LN01N
Description Ultrahigh-Speed Switching Applications
Feature Ordering number : ENN6558 5LN01N N-Channel Silicon MOSFET 5LN01N Ultrahigh-Speed Switching Applications Features
•
•
• Package Dimensions unit : mm 2178 5.
0 4.
0 Low ON-resistance.
Ultrahigh-speed switching.
2.
5V drive.
[5LN01N] 4.
0 0.
45 0.
5 0.
6 2.
0 5.
0 0.
45 0.
44 14.
0 1 2 3 1 : Source 2 : Drain 3 : Gate 1.
3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% C.
Manufacture Sanyo Semicon Device
Datasheet
Download 5LN01N Datasheet

5LN01N
5LN01N   5LN01N

　

　

　

　

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