www.DataSheet.co.kr
FDS6673BZ P-Channel PowerTrench® MOSFET
January 2006
FDS6673BZ P-Channel PowerTrench® MOSFET
-30V, -14.5A, 7.8mΩ General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power ...
