900N15N Datasheet

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900N15N Datasheet - Power Transistor

900N15N   900N15N  

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s OptiMOSTM3 Power-Transistor Package Ma rking • N-channel, normal level • E xcellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS( on) • 150 °C operating temperature Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free ac cording to IEC61249-2-21 BSZ900N15NS3 G Product Summary V DS R DS(on),max ID 150 V 90 mΩ 13 A PG-TSDSON-8 Type BSZ900N15NS3 G Package PG-TSDSON-8 Ma rking 900N15N Maximum ratings, at T j= 25 °C, unless otherwise specified Par ameter Symbol Conditions Continuous d rain current I D T C=25 °C T C=100 C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=10 A

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Power Transistor

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