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A1020

Toshiba Semiconductor

2SA1020


Description
2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SC2655 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Col...



Toshiba Semiconductor

A1020

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