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A2I20H060GNR1

Freescale Semiconductor

RF LDMOS Wideband Integrated Power Amplifiers


Description
Freescale Semiconductor Technical Data Document Number: A2I20H060N Rev. 0, 2/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I20H060N wideband integrated circuit is an asymmetrical Doherty designed with on--chip matching that makes it usable from 1800 to 2200 MHz. This multi--stage structure is rated for 26 to 32 V operation and covers all typica...



Freescale Semiconductor

A2I20H060GNR1

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